Semiconductor light emitting diode

Details Semiconductor light emitting diode Semiconductor light emitting diode

1995-07-05

1997-08-12

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 95, 257 82, 257 85, 257201, H01L 3300, H01L 2715

Patent

active

056568290

ABSTRACT:
A semiconductor light emitting diode includes a compound semiconductor substrate and a double-hetero structure of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0.ltoreq.x.ltoreq.1, 0<y<1) as an active layer, and an upper clad layer of the double-hetero structure has a larger band gap energy (Eg) than the band gap energy of the active layer and has a thickness of 3-50 .mu.m.

REFERENCES:
patent: 5075743 (1991-12-01), Behfar-Rad
patent: 5153889 (1992-10-01), Sugawara et al.
patent: 5255279 (1993-10-01), Takahashi et al.
patent: 5285087 (1994-02-01), Narita et al.
patent: 5296717 (1994-03-01), Valster et al.
patent: 5386310 (1995-01-01), Haneda et al.
patent: 5442204 (1995-08-01), Mensz

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