Semiconductor light emitting devices with non-epitaxial...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S045010

Reexamination Certificate

active

07856040

ABSTRACT:
The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer may also be employed with the non-epitaxial cladding layer.

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