Semiconductor light emitting devices including in-plane...

Details Semiconductor light emitting devices including in-plane... Semiconductor light emitting devices including in-plane...

2007-10-23

2007-10-23

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S101000, C257S627000, C257S628000, C257SE33006, C257SE33003, C372S045013, C372S043010, C372S075000

Reexamination Certificate

active

10829141

ABSTRACT:
A semiconductor light emitting device includes a planar light emitting layer with a wurtzite crystal structure having a <0001> axis roughly parallel to the plane of the layer, referred to as an in-plane light emitting layer. The in-plane light emitting layer may include, for example, a {1120} or {1010} InGaN light emitting layer. In some embodiments, the in-plane light emitting layer has a thickness greater than 50 Å.

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Yue Jun Sun et al., “Polarization anisotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells,” Applied Physics Letters, vol. 82, No. 22, Jun. 2, 2003, pp. 3850-3852.
Yue Ju Sun et al., “Nonpolar InxGa1-xN/GaN(1100) multiple quantum wells grown on γ-LIAIO2(100) by plasma-assisted molecular-beam epitaxy,” Physical Review B 67, 041306(R) (2003), The American Physical Society, 4 pages.
Arpan Chakraborty et al., “Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak,” Applied Physics Letters, vol. 85, No. 22, Nov. 29, 2004, pp. 5143-5145.

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