Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Patent
1997-09-04
2000-06-06
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
257 76, 257103, 257 96, 257 97, 257 13, 372 44, 372 45, H01L 3300
Patent
active
060721960
ABSTRACT:
Nitrogen-containing III-V alloy semiconductor materials have both a conduction band offset .DELTA.Ec and a valence band offset .DELTA.Ev large enough for the practical applications to light emitting devices. The semiconductor materials are capable of providing laser diodes, having excellent temperature characteristics with emission wavelengths in the red spectral region and of 600 nm or smaller, and high brightness light emitting diodes with emission wavelengths in the visible spectral region. The light emitting device is fabricated on an n-GaAs substrate, which has the direction normal to the substrate surface is misoriented by 15.degree. from the direction normal to the (100) plane toward the [011] direction. On the substrate, there disposed by MOCVD, for example, are an n-GaAs buffer layer, an n-(Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer, an (Al.sub.0.2 Ga.sub.0.8).sub.0.49 In.sub.0.51 N.sub.0.01 P.sub.0.99 active layer, a p-(Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer, and a p-GaAs contact layer.
REFERENCES:
patent: 3931631 (1976-01-01), Groves et al.
patent: 5274251 (1993-12-01), Ota et al.
patent: 5331656 (1994-07-01), Tanaka
patent: 5442201 (1995-08-01), Adomi et al.
patent: 5586136 (1996-12-01), Honda et al.
J.W. Matthews, et al., "Defects in Epitaxial Multilayers," Jour. of Crystal Growth, vol. 27, pp. 118-125, 1974.
Hamada et al., Electronics Letter, vol. 28, No. 19 Sep. 1992, pp. 1834-1836.
Tiwari et al., Applied Physics Letter, vol. 60 Feb. 1992, pp. 630-632.
Kondow et al., Japanese Journal Applied Physics, vol. 65(2), 1996, pp. 148-151.
Kishi et al., Technical Digest of Annual Meeting of Institute of Electronics, Information and Communication Engineers, GC-1, p. 437 of Part 4, Mar. 1991.
Guay John
Ricoh & Company, Ltd.
LandOfFree
semiconductor light emitting devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with semiconductor light emitting devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and semiconductor light emitting devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2215346