Semiconductor light-emitting device with ZnTe current spreading

Details Semiconductor light-emitting device with ZnTe current spreading Semiconductor light-emitting device with ZnTe current spreading

1994-07-14

1996-04-09

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 94, 257200, 257614, 257 96, 372 44, 372 49, H01L 3300, H01S 319

Patent

active

055064230

ABSTRACT:
A semi-conductor light-emitting device has a substrate, an active layer formed on the substrate for emitting light when an electric current is supplied, a current spreading layer formed on the active layer for spreading an electric current, a light-outputting layer formed on the current spreading layer, and electrodes provided on the semiconductor substrate and the light emitting layer for providing electric current to the active layer. In the device, the current spreading layer is formed of zinc telluride (ZnTe).

REFERENCES:
patent: 5274248 (1993-12-01), Yokogawa
patent: 5300791 (1994-04-01), Chen et al.
"High-efficiency InGaAIP/GaAs visible light-emitting diodes", H. Sugawara et. al., Appl. Phys. Lett., 58(10) :1010-1012 (1991).

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