Semiconductor light emitting device with stacked active regions

Details Semiconductor light emitting device with stacked active regions Semiconductor light emitting device with stacked active regions

1986-10-06

1989-03-28

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 372 46, 372 50, H01S 319

Patent

active

048171034

ABSTRACT:
A layered structure is disclosed which includes a stack of alternating active regions and confining layers arranged so that each active region is sandwiched between confining layers. Each active region preferably includes one or more quantum well layers disposed between barrier layers. Carrier injection means are provided for injecting carriers into the layered structure to cause phase locked light emission from the active regions. In this manner, an output laser beam can be obtained that has substantially improved far field divergence as compared, for example, to a beam emanating from a single active region.

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Deppe et al., "Low Threshold Disorder-Defined Buried Heterostructure Al.sub.x Ga.sub.1-x As-Ga As Quantum Well Lasers", J. Appl. Phys., 58, 1985.
G. Thompson, "Physics of Semiconductor Laser Devices" J. Wiley & Sons, 1984.
D. Botez, "Laser Diodes are Power Packed", IEEE Spectrum, Jun., 1985.
Y. Yang et al., "Transverse Junction Stripe Laser with a Lateral Heterobarrier by Diffusion Enhanced Alloy Disordering", Appl. Phys. Lett. 49, Oct. 6, 1986.

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