Semiconductor light-emitting device with selectively formed...

Details Semiconductor light-emitting device with selectively formed... Semiconductor light-emitting device with selectively formed...

2011-03-22

2011-03-22

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

C438S029000, C257S094000

Reexamination Certificate

active

07910388

ABSTRACT:
The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a multi-layer structure, and an ohmic electrode structure. The buffer layer is selectively formed on an upper surface of the substrate such that the upper surface of the substrate is partially exposed. The multi-layer structure is formed to overlay the buffer layer and the exposed upper surface of the substrate. The multi-layer structure includes a light-emitting region. The buffer layer assists a bottom-most layer of the multi-layer structure in lateral and vertical epitaxial growth. The ohmic electrode structure is formed on the multi-layer structure.

REFERENCES:
patent: 6753552 (2004-06-01), Lan et al.
patent: 7482183 (2009-01-01), Edmond et al.
patent: 2005/0236633 (2005-10-01), Emerson
patent: 2007/0069225 (2007-03-01), Krames et al.
patent: 2007/0085093 (2007-04-01), Ohmae et al.
patent: 2009/0057700 (2009-03-01), Jin et al.

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