Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Patent
1994-03-23
1995-08-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
257 87, 257 94, 257102, 257103, H01L 3300
Patent
active
054422019
ABSTRACT:
An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0<x.ltoreq.1, 0<y.ltoreq.1) is formed on a compound semiconductor single crystal substrate composed of an element(s) from Group III and an element(s) from Group V in the periodic table by means of the metalorganic vapor phase epitaxy method (MOVPE method), while controlling the amount of the organic aluminum compound introduced. The organic aluminum compound is, for example, trimethyl aluminum (TMAl). The nitrogen-doped epitaxial layer is, for example, an active layer composed of said compound semiconductor alloy which has a band gap of 2.30 eV or larger and also has an alloy composition of an indirect transition area or similar to it.
REFERENCES:
patent: 4001056 (1977-01-01), Groves et al.
patent: 4494237 (1985-01-01), DiForte et al.
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5115286 (1992-05-01), Camras et al.
patent: 5164798 (1992-11-01), Huang
patent: 5173751 (1992-12-01), Ota et al.
Adomi Keizo
Nakamura Akio
Noto Nobuhiko
Takenaka Takao
Mintel William
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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