Semiconductor light emitting device with luminescent layer sandw

Details Semiconductor light emitting device with luminescent layer sandw Semiconductor light emitting device with luminescent layer sandw

1992-01-21

1993-06-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 96, 372 99, H01S 319

Patent

active

052166856

ABSTRACT:
A surface emitting laser device has a luminescent layer, a lower distributed Bragg reflector formed below the luminescent layer and an upper distributed Bragg reflector formed over the luminescent layer, and each of the lower and upper distributed Bragg reflectors comprises a high refractive film of gallium arsenide with the minimum forbidden band width at gamma point, an intermediate film of aluminum gallium arsenide and a low refractive film of aluminum gallium arsenide with the minimum forbidden band width outside the gamma point, wherein the aluminum gallium arsenide for the intermediate film has a predetermined forbidden band width, and the forbidden band gap between the high refractive film and the intermediate film is approximately equal to the forbidden band gap between the intermediate film and the low refractive film so that the series resistance of the surface emitting laser device is drastically reduced.

REFERENCES:
patent: 5052016 (1991-09-01), Mahbobzadeh et al.
patent: 5068868 (1991-11-01), Deppe et al.

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