Semiconductor light-emitting device with layers having different

Details Semiconductor light-emitting device with layers having different Semiconductor light-emitting device with layers having different

1982-10-21

1985-10-08

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

045464790

ABSTRACT:
A semiconductor light-emitting device fabricated as a double hetero-structure InGaAsP/InP-type laser. The laser includes a buffer layer made of a semiconductor. The buffer layer is located at the upper edge of the flow region of electrons as seen from the active layer. The conductivity type of the buffer layer is opposite to that of a clad layer located at the upper edge of the flow region of electrons seen from the buffer layer. A, the band gap of the buffer layer is wider than that of the active layer but narrower than that of a clad layer adjacent to the buffer layer. The thickness of the buffer layer does not exceed the diffusion length of the electrons injected into the buffer layer.

REFERENCES:
patent: 3812516 (1974-05-01), Hayashi
patent: 3838359 (1974-09-01), Hakki et al.
patent: 4016505 (1977-04-01), Itoh et al.
patent: 4184170 (1980-01-01), Burnham et al.
patent: 4287485 (1981-09-01), Hsieh
Applied Physics Letters, "A New Current-Injection Heterostructure Laser: The Double-Barrier Double-Heterostructure Laser", by Tsang, vol. 38, No. 11, 6/81.
Electronics Letters, "High Temperature CW Operation of 1.5 mum InGaAsP/InP Buffer-Layer Loaded Planoconvex Waveguide Lasers," vol. 17, No. 6, 3/19/81.
IEEE Electron Device Letters, "Performance Characteristics and Extended Lifetime Data for InGaAsP/InP LED's", by Yeats et al., vol. EDL-2, No. 9, 9/81, pp. 234-236.
Electronics Letters, "Temperature Dependence of InGaAsP Double-Heterostructure Laser Characteristics", by Nahory et al., vol. 15, No. 21, 10/79, pp. 695-696.

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