Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-08-09
2011-08-09
Sayadian, Hrayr A (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S081000, C257S093000, C257S099000, C257SE27120, C257SE33055, C257SE33062, C257SE33066
Reexamination Certificate
active
07994514
ABSTRACT:
One or more circuit elements such as silicon diodes, resistors, capacitors, and inductors are disposed between the semiconductor structure of a semiconductor light emitting device and the connection layers used to connect the device to an external structure. In some embodiments, the n-contacts to the semiconductor structure are distributed across multiple vias, which are isolated from the p-contacts by one or more dielectric layers. The circuit elements are formed in the contacts-dielectric layers-connection layers stack.
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Merriam-Webster OnLine definition of “sandwiched.”
Patricia A. Beck et al., “High Current Density in μc-Si PECVD Diodes for Low Temperature Applications,” Hewlett-Packard publication, Apr. 6, 2004, 7 pages.
International Searching Authority: PCT/IB2007/051372, International Filing Date: Apr. 17, 2007.
Bhat Jérôme C.
Boles Steven T.
Koninklijke Philips Electronics , N.V.
Philips Lumileds Lighting Company LLC
Sayadian Hrayr A
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