Semiconductor light-emitting device with InGaAlP

Details Semiconductor light-emitting device with InGaAlP Semiconductor light-emitting device with InGaAlP

1992-01-13

1993-08-10

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 22, 257 96, 257 97, 372 44, 372 45, H01L 3300

Patent

active

052351947

ABSTRACT:
A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

REFERENCES:
patent: 4974231 (1990-11-01), Gomyo
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5016252 (1991-05-01), Hamada et al.
patent: 5048035 (1991-09-01), Sugawara et al.
patent: 5060028 (1991-10-01), Kuo et al.
Ishiguro et al., "High Efficient GaAlAs Light-Emitting Diodes of 660 nm with a Double Heterostructure on a GaAlAs Substrate", Applied Physics Letters, vol. 43, 1983, p. 1034.
Iga et al., "Microcavity GaAlAs/GaAs Surface-Emitting Laser With I.sub.th =6mA", Electronics Letters, vol. 23, No. 3, 1987, p. 134.

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