Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Patent
1998-10-02
2000-09-19
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
257100, 257 98, H01L 3300
Patent
active
061216372
ABSTRACT:
In a chip-type light emitting device in which first and second terminal electrodes are formed on both ends of an insulating substrate with a light emitting device chip being mounted on the surface side, the LED chip is directly formed on the insulating substrate, and at least a portion of the insulating substrate on which the LED chip is mounted is formed by a whitish material. Alternatively, in a lamp-type semiconductor light emitting device in which the LED chip is mounted on the top of a lead, and is covered with a dome-shaped package, or in a chip-type semiconductor light emitting device, a bonding material used for bonding the LED chip is made of a whitish material. Therefore, it becomes possible to reflect light that proceeds toward the back surface side of the LED chip efficiently, and consequently to increase the necessary luminosity even if the light-emitting efficiency inside the LED chip remains the same.
REFERENCES:
patent: 5173759 (1992-12-01), Murano
patent: 5798536 (1998-08-01), Tsutsui
Isokawa Shinji
Toda Hidekazu
Rohm & Co., Ltd.
Tran Minh Loan
LandOfFree
Semiconductor light emitting device with increased luminous powe does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting device with increased luminous powe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device with increased luminous powe will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1075868