Semiconductor light-emitting device with high...

Details Semiconductor light-emitting device with high... Semiconductor light-emitting device with high...

2007-12-07

2010-06-29

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

C257S087000, C257S098000, C257SE25032, C438S029000, C438S069000

Reexamination Certificate

active

07745837

ABSTRACT:
The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure.

REFERENCES:
patent: 2007/0085093 (2007-04-01), Ohmae et al.
NIST, National Institute of Standards and Technology, Document SP 966, Sep. 2003.

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