Semiconductor light-emitting device with double-sided...

Details Semiconductor light-emitting device with double-sided... Semiconductor light-emitting device with double-sided...

2011-05-17

2011-05-17

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S080000, C257S082000, C257S097000, C257S099000, C257SE29078, C257SE33005, C257SE33008, C257SE33066, C257SE33068, C438S032000, C438S033000, C438S034000

Reexamination Certificate

active

07943942

ABSTRACT:
A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and the horizontal surface of the second doped layer.

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