Semiconductor light emitting device with depletion layer

Details Semiconductor light emitting device with depletion layer Semiconductor light emitting device with depletion layer

1995-10-19

1997-03-11

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257 94, 257 95, 257 96, 257 97, H01L 3300

Patent

active

056104120

ABSTRACT:
A semiconductor device having superior light output efficiency is disclosed. A p-Si diffusion layer is formed on a Si substrate and an n-Si diffusion layer is formed in the p-Si diffusion layer. An n-GaAs layer constituting an active region for emitting light is grown on the p-Si diffusion layer and the n-Si diffusion layer of the Si substrate and a p-GaAs layer constituting an active region for emitting light is grown on the n-GaAs layer. An upper electrode is disposed on an upper surface of the p-GaAs layer above the p-Si diffusion layer. Current is injected from the upper electrode through a region of the pn junction between the n-GaAs layer and the p-GaAs layer other than that directly below the upper electrode, and light is emitted from this region. The emitted light passes through the p-GaAs layer to outside the device without passing through and being attenuated by the upper electrode.

REFERENCES:
patent: 5260588 (1993-11-01), Ohta et al.
patent: 5408105 (1995-04-01), Adachi et al.
Ishino et al: "Characterization of GaAs layer grown on Si substrates by MMBE", Applied Physics Society Advance Articles, Autumn 1987, p. 236, 20p-X-13.

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