Semiconductor light emitting device with current spreading layer

Details Semiconductor light emitting device with current spreading layer Semiconductor light emitting device with current spreading layer

1995-08-14

1997-02-04

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257102, 257103, 372 45, 372 46, H01L 3300

Patent

active

056001584

ABSTRACT:
A semiconductor light emitting device comprising an n-type GaAs substrate, a light emitting layer portion consisting of an AlGaInP double heterojunction structure formed on the substrate, and a p-type current spreading layer formed on the light emitting layer portion, wherein the p-type current spreading layer comprises an undoped current spreading layer and a heavily-doped current spreading layer formed on said undoped current spreading layer. With this construction, it is possible to achieve a stable control of carrier concentration in a p-type cladding layer, to prevent deterioration of the interface between the p-type cladding layer and an active layer and also to prevent crystallinty-deterioration of the active layer with the result that the emission intensity of the device can be increased to a considerable extent.

REFERENCES:
patent: 5048035 (1991-09-01), Sugawara et al.
patent: 5466950 (1995-11-01), Sugawara et al.
K. H. Huang, et al., "Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer", 320 Applied Physics Letters 61 (9) 31 Aug., 1992 pp. 1045-1047.
Semiconductors and Semimetals, vol. 30, vol. Editor-- Toshiaki Ikoma "Very High Speed Integrated Circuits: Heterostructure", pp. 208-211, 1990.

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