Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1994-07-01
1995-04-04
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 372 45, 372 46, 372 48, H01L 3300
Patent
active
054040310
ABSTRACT:
A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.
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Scott et al., "Code: a novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides", Journal of Crystal Growth (1988) 93:820-824.
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Nakatsu Hiroshi
Sasaki Kazuaki
Watanabe Masanori
Yamamoto Osamu
Yamamoto Saburo
Mintel William
Sharp Kabushiki Kaisha
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