Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1994-03-11
1996-01-30
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257201, 372 43, 372 44, 372 45, H01L 3300
Patent
active
054882338
ABSTRACT:
This invention provides a semiconductor light-emitting device including a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the period table, a first compound semiconductor layer formed directly on at least a portion of the semiconductor substrate and consisting of a compound semiconductor containing at least In and P, and a second compound semiconductor formed directly on the first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table. With this arrangement, it is possible to sufficiently prevent the occurrence of defects in the interface between the semiconductor substrate and the second compound semiconductor layer consisting of the compound semiconductor of the elements in the second and sixth groups of the periodic table.
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Appl. Phys. Lett. vol. 59, No. 27, H. Jeon, et al., "Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells", Dec. 30, 1991, pp. 3619-3621.
Appl. Phys. Lett. vol. 59 No. 11, M. A. Haase, et al., "Blue-green laser diodes", Sep. 9, 1991, pp. 1272-1274.
Hatakoshi Gen-ichi
Ishikawa Masayuki
Nishikawa Yukie
Nitta Koichi
Onomura Masaaki
Kabushiki Kaisha Toshiba
Mintel William
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