Semiconductor light emitting device with blocking layer

Details Semiconductor light emitting device with blocking layer Semiconductor light emitting device with blocking layer

1996-07-10

1998-04-28

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 95, 257 96, 257 97, 257 98, 372 46, 372 49, 372 99, H01L 3300

Patent

active

057448280

ABSTRACT:
A semiconductor light emitting device has a semiconductor substrate (1). On a first principal plane of the substrate, an emission layer is formed. In a predetermined region on the emission layer, a current blocking layer (10) is formed. On the current blocking layer, an excitation electrode (20) is formed. A substrate electrode (9) is formed on a second principal plane of the substrate. The excitation electrode is composed of a bonding pad (21) and a current supply electrode (22). The current blocking layer is under the bonding pad. The current blocking layer prevents a current from flowing under the bonding pad. The current supply electrode improves the light emission efficiency of the device.

REFERENCES:
patent: 4145707 (1979-03-01), Sadamasa et al.
patent: 5309001 (1994-05-01), Watanabe et al.
patent: 5466950 (1995-11-01), Sugawara et al.
patent: 5506423 (1996-04-01), Saeki
patent: 5517039 (1996-05-01), Holonyak, Jr. et al.
patent: 5585649 (1996-12-01), Ishikawa et al.

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