Semiconductor light emitting device with an active layer made of

Details Semiconductor light emitting device with an active layer made of Semiconductor light emitting device with an active layer made of

1997-02-24

2000-06-06

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 98, 257627, 257628, 257 94, H01L 3300, H01L 2904

Patent

active

060721979

ABSTRACT:
A semiconductor light emitting device includes a second semiconductor layer, an active layer, a third semiconductor layer and a pair of electrodes. The second semiconductor layer is formed directly on the principal pane of a substrate or via a first semiconductor layer. The active layer is formed on the second semiconductor layer and has an energy band gap which is smaller than the energy band gap of the second semiconductor layer. The active layer is made of a semiconductor having an uniaxial anisotropy. The third semiconductor layer is formed on the active layer and has the energy band gap which is larger than the energy band gap of the active layer. The pair of electrodes supplies current to the second semiconductor layer, the active layer, and the third semiconductor layer in the film thickness direction. The film thickness direction of at least the active layer is different from the axis of the uniaxial anisotropy.

REFERENCES:
patent: 5604763 (1997-02-01), Kato et al.
patent: 5625202 (1997-04-01), Chai

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