Semiconductor light-emitting device with a highly reflective...

Details Semiconductor light-emitting device with a highly reflective... Semiconductor light-emitting device with a highly reflective...

2011-07-12

2011-07-12

Nguyen, Dao (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

Reexamination Certificate

active

07977663

ABSTRACT:
A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer.

REFERENCES:
patent: 5898185 (1999-04-01), Bojarczuk et al.
patent: 6686610 (2004-02-01), Sheu
patent: 6870191 (2005-03-01), Niki et al.
patent: 7132691 (2006-11-01), Tanabe et al.
patent: 7763900 (2010-07-01), Lee
patent: 7872271 (2011-01-01), Seong et al.
patent: 2003/0160229 (2003-08-01), Narayan et al.
patent: 2004/0026704 (2004-02-01), Nikolaev et al.
patent: 2005/0110037 (2005-05-01), Takeda
patent: 2005/0133797 (2005-06-01), Seong
patent: 2007/0102711 (2007-05-01), Aoyagi et al.
patent: 2007/0257269 (2007-11-01), Cho et al.
patent: 2008/0121914 (2008-05-01), Seong et al.
patent: 2008/0191233 (2008-08-01), Yang et al.
patent: 2008/0315229 (2008-12-01), Yi et al.

Affiliated with

Also associated with

Rating

Semiconductor light-emitting device with a highly reflective... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light-emitting device with a highly reflective..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting device with a highly reflective... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2660852