Semiconductor light-emitting device, surface-emission laser...

Details Semiconductor light-emitting device, surface-emission laser... Semiconductor light-emitting device, surface-emission laser...

2007-02-20

2007-02-20

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

C257S087000, C257S102000, C257SE33011, C257SE33043, C372S045010, C372S046013

Reexamination Certificate

active

10788086

ABSTRACT:
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

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