Semiconductor light-emitting device, surface-emission laser...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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C438S036000, C438S404000, C438S413000, C438S479000, C438S513000, C369S116000, C369S121000

Reexamination Certificate

active

07067846

ABSTRACT:
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

REFERENCES:
patent: 6072196 (2000-06-01), Sato
patent: 6207973 (2001-03-01), Sato et al.
patent: 6392979 (2002-05-01), Yamamoto et al.
patent: 6452215 (2002-09-01), Sato
patent: 6542528 (2003-04-01), Sato et al.
patent: 6563851 (2003-05-01), Jikutani et al.
patent: 6614821 (2003-09-01), Jikutani et al.
patent: 6657233 (2003-12-01), Sato et al.
patent: 6674785 (2004-01-01), Sato et al.
patent: 2002/0110945 (2002-08-01), Kuramata et al.

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