Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-06-27
2006-06-27
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C438S036000, C438S404000, C438S413000, C438S479000, C438S513000, C369S116000, C369S121000
Reexamination Certificate
active
07067846
ABSTRACT:
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
REFERENCES:
patent: 6072196 (2000-06-01), Sato
patent: 6207973 (2001-03-01), Sato et al.
patent: 6392979 (2002-05-01), Yamamoto et al.
patent: 6452215 (2002-09-01), Sato
patent: 6542528 (2003-04-01), Sato et al.
patent: 6563851 (2003-05-01), Jikutani et al.
patent: 6614821 (2003-09-01), Jikutani et al.
patent: 6657233 (2003-12-01), Sato et al.
patent: 6674785 (2004-01-01), Sato et al.
patent: 2002/0110945 (2002-08-01), Kuramata et al.
Itoh Akihiro
Jikutani Naoto
Kaminishi Morimasa
Sato Shun'ichi
Takahashi Takashi
LandOfFree
Semiconductor light-emitting device, surface-emission laser... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light-emitting device, surface-emission laser..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting device, surface-emission laser... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3626709