Semiconductor light emitting device substrate and method of...

Details Semiconductor light emitting device substrate and method of... Semiconductor light emitting device substrate and method of...

2006-09-06

2008-09-23

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257SE29322, C438S022000

Reexamination Certificate

active

07427772

ABSTRACT:
A substrate for semiconductor light emitting devices is provided. The substrate is characterized in that the substrate is a single crystal material and has a nanocrystal structure capable of diffracting an electromagnetic wave. The nanocrystal structure is disposed on a surface portion of the substrate and includes an etched region and an unetched region, wherein the etched region has a depth of 10-200 nm. Due to the periodicity of the nanocrystal structure, the semiconductor material grown on the substrate has fewer defects, and the material stress is reduced.

REFERENCES:
patent: 5990479 (1999-11-01), Weiss et al.
patent: 6210997 (2001-04-01), Adachi et al.
patent: 6344403 (2002-02-01), Madhukar et al.
patent: 2003/0102469 (2003-06-01), Jones et al.
patent: 2004/0094773 (2004-05-01), Kiyoku et al.
patent: 2005/0082543 (2005-04-01), Alizadeh et al.
patent: 2006/0060888 (2006-03-01), Kim et al.
patent: 2007/0166916 (2007-07-01), Solomon et al.
patent: 536841 (2003-06-01), None
patent: 561632 (2003-11-01), None
Xiao Hong, “Introduction to semiconductor manufacturing technology”, 2001, pp. 220-224.

Affiliated with

Also associated with

Rating

Semiconductor light emitting device substrate and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device substrate and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device substrate and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3980546