Semiconductor light emitting device, semiconductor laser device,

Details Semiconductor light emitting device, semiconductor laser device, Semiconductor light emitting device, semiconductor laser device,

1996-05-17

1998-03-10

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

257 77, 372 45, H01S 302

Patent

active

057270082

ABSTRACT:
A semiconductor light emitting device and a semiconductor laser device having an epitaxial growth layer composed of a III-V group nitride semiconductor. An AlN buffer layer, an n-type GaN intermediate layer, an n-type Al.sub.1-x Ga.sub.X N cladding layer, an In.sub.1-Y Ga.sub.Y N active layer and a p-type Al.sub.1-X Ga.sub.X N cladding layer, and a p-type GaN contact layer are successively formed on an n-type 6H--SiC substrate having a {0001} crystal growth plane. A p-side electrode is formed on the upper surface of the p-type GaN contact layer, and an n-side electrode is formed on the lower surface of the n-type 6H--SiC substrate, after which the n-type 6H--SiC substrate is cleaved along a {1120} plane to form a cavity facet.

REFERENCES:
patent: 4912063 (1990-03-01), Davis et al.
patent: 5008735 (1991-04-01), Edmond et al.
patent: 5027168 (1991-06-01), Edmond
patent: 5187547 (1993-02-01), Niina et al.
patent: 5200022 (1993-04-01), Kong et al.
patent: 5387804 (1995-02-01), Suzuki et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5432808 (1995-07-01), Hatano et al.
patent: 5585648 (1996-12-01), Tischler
Yoshiro Kuga et al, Japanese Journal Applied Physics. vol. 35 (1995) pp.4085-4086 Part 1, No. 8A, Aug. 1995.
Isamu Akasaki et al., Japanese Journal Applied Physics. vol. 34 (1995) L1517-1519 Part 2, No. 11B, Nov. 1995.
Shuji Nakamura et al., Japanese Journal Applied Physics. vol. 35 (1996) pp. L74-76 Part 2, No. 1B, 15 Jan. 1996.
Akito Kuramata et al., International Symposium on Blue Laser and Light Emitting Diodes Chiba University, Japan, Mar. 5-7, 1996.

Affiliated with

Also associated with

Rating

Semiconductor light emitting device, semiconductor laser device, does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device, semiconductor laser device,, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device, semiconductor laser device, will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-146143