Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-04-05
2005-04-05
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S079000, C257S080000, C257S094000, C257S096000, C257S098000
Reexamination Certificate
active
06876003
ABSTRACT:
A light-emitting layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation.
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Matsubara Hideki
Nakamura Takao
Fasse W. F.
Fasse W. G.
Louie Wai-Sing
Pham Long
Sumitomo Electric Industries Ltd.
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