Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2011-07-26
2011-07-26
Sefer, Ahmed (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S098000, C257S099000, C257SE33034, C257SE33064
Reexamination Certificate
active
07985976
ABSTRACT:
There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
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Cho Myong Soo
Choi Pun Jae
Lee Jin Hyun
Park Ki Yeol
McDermott Will & Emery LLP
Samsung LED Co., Ltd.
Sefer Ahmed
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