Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2008-09-11
2011-11-15
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257SE33023
Reexamination Certificate
active
08058660
ABSTRACT:
Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a <110> direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the <110> direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.
REFERENCES:
patent: 5111469 (1992-05-01), Narui et al.
patent: 2990837 (1999-10-01), None
patent: 3399018 (2003-02-01), None
patent: 2006-5130 (2006-05-01), None
Sze, Physics of Semiconductor Devices, 2007, Wiley-Interscience, Third Edition, pp. 611, 789.
Kamada Michiru
Karino Sachio
Nagatake Tsuyoshi
Narui Hironobu
Okano Nobukata
Loke Steven
SNR Denton US LLP
Sony Corporation
Ziskind David
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