Semiconductor light-emitting device, method for...

Details Semiconductor light-emitting device, method for... Semiconductor light-emitting device, method for...

2008-06-10

2011-10-11

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S091000, C257S094000, C257S095000, C257S081000, C362S612000, C362S545000

Reexamination Certificate

active

08035118

ABSTRACT:
A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

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