Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated
Reexamination Certificate
2006-02-23
2010-12-28
Pizarro, Marcos D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Encapsulated
C257S040000, C257S079000, C257SE33059, C438S026000
Reexamination Certificate
active
07859006
ABSTRACT:
A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of −40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of −80 ppm or more and less than −40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive.
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Brennan et al. “Fluorescence and NMR Characterization and Biomolecule Entrapment Studies of Sol-Gel-Derived Organic-Inorganic Composite Materials Formed by Sonication of Precursors” Chem. Mater., 1999, 11 (7), pp. 1853-1864.
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Kato Hanako
Kobayashi Hiroshi
Mori Yutaka
Tomura Tsubasa
Gupta Raj
Mitsubishi Chemical Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Pizarro Marcos D
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