Semiconductor light emitting device manufacture method

Details Semiconductor light emitting device manufacture method Semiconductor light emitting device manufacture method

2010-10-13

2011-10-25

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S104000, C257S103000, C257SE33037, C257SE33072

Reexamination Certificate

active

08043879

ABSTRACT:
A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.

REFERENCES:
patent: 2004/0072383 (2004-04-01), Nagahama et al.
patent: 2004/0104395 (2004-06-01), Hagimoto et al.
patent: 2004/0191939 (2004-09-01), Kon et al.
patent: 2002-111059 (2002-04-01), None
patent: 2004-266240 (2004-09-01), None
patent: 2004-281863 (2004-10-01), None
patent: 2004-296846 (2004-10-01), None
patent: 2004-342732 (2004-12-01), None
patent: 2005-079298 (2005-03-01), None
patent: 2005-109207 (2005-04-01), None
Christen et al., “Luminescene Micro-Characterization of epitaxial ZnO and ZnO heterostructures”, http://physik.unihalle.de/FG/seminars/ws2005/abstracts/it/i6.htm, 2 pages, printed from the Internet on Jan. 26, 2006.
Iwata et al., “Bandgap Engineering of ZnO Using Se”, Phys. Stat. Sol. (b) 229, No. 2, pp. 887-890, 2002.
“Property of Oxides—II-VI zoku sankabutsu handoutai no kiso bussei”, Research Initiatives at Kyoto University International Innovation Center, http://www.iic.kyoto-u.ac.jp/sozo/fujita/research/zno/prop.html, 2 pages, printed from the Internet on Jan. 31, 2008.
Meyer et al., “Structural properties and bandgap bowing of ZnO1-xSx thin films deposited by reactive sputtering”, Applied Physics Letters, vol. 85, No. 21, pp. 4929-4931, Nov. 22, 2004.
International Search Report (ISR) issued in PCT/JP2006/310245 (parent application) mailed in Jun. 2006 for Examiner consideration.
Written Opinion (PCT/ISA/237) issued in PCT/JP2006/310245 (parent application) mailed in Jun. 2006.

Affiliated with

Also associated with

Rating

Semiconductor light emitting device manufacture method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device manufacture method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device manufacture method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4290836