Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2003-06-25
2008-03-04
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S094000, C257S096000, C257S103000
Reexamination Certificate
active
07339195
ABSTRACT:
A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
REFERENCES:
patent: 5670798 (1997-09-01), Schetzina
patent: 6060335 (2000-05-01), Rennie
patent: 6309459 (2001-10-01), Yuge
patent: 6515313 (2003-02-01), Ibbetson et al.
patent: 0 803 916 (1999-10-01), None
patent: 09-266326 (1997-10-01), None
patent: 11-54794 (1999-02-01), None
patent: 11-243251 (1999-09-01), None
Shuji Nakamura, et al., “Characteristics of InGaN multi-quantum-well-structure laser diodes”, Applied Physics Letters, 1996, vol. 68, No. 23, pp. 3269-3271.
“InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets,” Jpn. J. Appl. Phys., vol. 35, 1996, pp. L217-L220.
“Blue InGaN-Based Laser Diodes with an Emission Wavelength of 450nm” Appl. Phys. Lett., vol. 76, 2000, pp. 22-24.
“Fist III-V-Nitride-Based Violet Laser Diodes” J. Crystal Growth, vol. 170, 1997, pp. 11-15.
“High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates.” Jpn. J. Appl. Phys., vol. 35, 1998, pp. L309-L312.
“InGaN/GaN/AlGaN-Based Laser Diodes Grown on Epitaxially Laterally Overgrown GaN,” J. Mater. Res., vol. 14, No. 7, 1999, pp. 2716-2731.
“InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices,” Jpn. J. Appl. Phys., vol. 36, 1997, pp. 1568-1571.
Asano Takeharu
Goto Osamu
Ikeda Masao
Mizuno Takashi
Shibuya Katsuyoshi
Nadav Ori
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
LandOfFree
Semiconductor light emitting device, its manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting device, its manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device, its manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3976311