Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Patent
1997-09-25
2000-05-02
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
257103, 257 96, 372 45, H01L 3300
Patent
active
060575654
ABSTRACT:
In the semiconductor light emitting device, a high resistance layer formed by mutual diffusion at an interface with the substrate crystal can be eliminated, and a low resistance p-type contact can be realized. In addition, it is possible to reduce the leak current when an internal current-blocking structure is formed. In practice, a compound semiconductor layer offset in composition ratio stoichiometrically is used as the contact layer. Further, when a predetermined element is added to the contact layer, a large amount of doping can be enabled in comparison with when impurities are added to the ordinary GaN based layer. Therefore, a high concentration conductive type layer can be realized while reducing the contact resistance. In addition, when the compound semiconductor layer offset away from the stoichiometric composition is used as the current-blocking layer, the current-blocking efficiency can be improved. Further, when the substrate is irradiated with light having energy slightly higher than that of the band gap of the grown crystal in the photo-excitation MOCVD method in order to eliminate the rough surface, it is possible to realize the p-type conductive of high carrier concentration.
REFERENCES:
patent: 5693963 (1997-12-01), Fujimoto et al.
patent: 5740192 (1998-04-01), Hatano et al.
patent: 5825052 (1998-10-01), Shakuda
Fujimoto Hidetoshi
Hatakoshi Gen-ichi
Ishikawa Masayuki
Kokubun Yoshihiro
Yoshida Hiroaki
Kabushiki Kaisha Toshiba
Tran Minh Loan
LandOfFree
Semiconductor light emitting device including a non-stoichiometr does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting device including a non-stoichiometr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device including a non-stoichiometr will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1595728