Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-01-17
2006-01-17
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S082000, C257S085000, C257S094000, C372S043010
Reexamination Certificate
active
06987285
ABSTRACT:
The semiconductor light emitting device includes a semiconductor substrate formed from InP, an active layer, an n-type cladding layer formed from InGaAsP, and a p-type cladding layer formed from InP. The active layer is formed at the upper side of the semiconductor substrate. The n-type cladding layer and the p-type cladding layer are formed so as to hold the active layer therebetween. The semiconductor light emitting device is, given that, a refractive index of the n-type cladding layer is na, and a refractive index of the p-type cladding layer is nb, set so as to be the relationship of na>nb in which the refractive index na of the n-type cladding layer is higher than the refractive index nb of the p-type cladding layer, and due to the distribution of light generated by the active layer being deflected to the n-type cladding layer side, optical loss by intervalence band light absorption at the p-type cladding layer is suppressed, and high-power light output can be obtained.
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Kikugawa Tomoyuki
Nagashima Yasuaki
Shimose Yoshiharu
Yamada Atsushi
Anritsu Corporation
Brewster William M.
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