Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2011-03-15
2011-03-15
Pert, Evan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C438S033000
Reexamination Certificate
active
07906788
ABSTRACT:
A semiconductor light emitting device (10) is provided with a base substrate (12) and three LED chips (14A,14B, and14C) disposed on the base substrate (12). Each LED chip (14A,14B, and14C) includes a semiconductor multilayer structure (20) and has a rhombus shape with interior angles of approximately 60 and approximately 120 in plan view. Each semiconductor multilayer structure (20) has an HCP single crystal structure and includes a light emission layer (24). The LED chips (14A,14B, and14C) are arranged on the base substrate (12) so as to face one another at a vertex forming the larger interior angle in plan view. With this arrangement, the LED chips (14A,14B, and14C) as a whole form a substantially regular hexagonal shape.
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Kolahdouzan Hajar
Panasonic Corporation
Pert Evan
LandOfFree
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