Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-11-11
2010-11-16
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257SE27072, C438S029000
Reexamination Certificate
active
07834370
ABSTRACT:
A semiconductor light emitting device includes a mount member and a semiconductor light emitting element arranged on the mount member. The mount member includes a substrate; an electrode assembly (a positive electrode, a negative electrode, and bumps) that are arranged on a top surface of a substrate and contacts the semiconductor light emitting element. A reflecting member is out of contact with the semiconductor light emitting element and the electrode assembly. According to this structure, a semiconductor light emitting device can be provided, which efficiently outputs output light using a material having a high reflectance regardless of whether the material is appropriate for an electrode.
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Japanese Office Action dated Mar. 25, 2008 for Japanese Application No. 2004-341237.
Kishimoto Yukio
Koya Kenichi
Monbleau Davienne
Panasonic Corporation
Rodela Eduardo A
Wenderoth , Lind & Ponack, L.L.P.
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