Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-12-05
2010-02-02
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257SE33068, C257S079000
Reexamination Certificate
active
07655959
ABSTRACT:
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.
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Lee Jeong-wook
Paek Ho-sun
Sung Youn-joon
Buchanan & Ingersoll & Rooney PC
Dickey Thomas L
Erdem Fazli
Samsung Electro-Mechanics Co. Ltd.
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