Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-03-23
1994-03-01
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 95, 257 96, 257627, 372 45, 372 46, H01L 3300
Patent
active
052910334
ABSTRACT:
A semiconductor light-emitting device is disclosed in which the lifetime of the device is increased by preventing deterioration of a current blocking layer interface caused by contamination during fabrication. The light-emitting device includes a substrate having a first surface and a stepped surface extending at an angle from the first surface formed by etching through the substrate. One of the surfaces is a (100) oriented surface and the other surface is a (111)B oriented surface. A current blocking layer is deposited by molecular beam epitaxy on the (100) oriented surface and the active layers of the device are deposited on the (111)B oriented surface. The (111)B oriented surface thereby becomes the current flow channel where oscillation occurs to generate light.
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Eastman Kodak Company
Hille Rolf
Owens Raymond L.
Tran Minhloan
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