Semiconductor light emitting device having strong directivity of

Details Semiconductor light emitting device having strong directivity of Semiconductor light emitting device having strong directivity of

1994-06-20

1995-10-10

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257 98, 372 48, 372 50, 372 99, H01L 3300

Patent

active

054573289

ABSTRACT:
A semiconductor light emitting device has an emittive layer formed on a semiconductor substrate, the emittive layer which emits light by being activated with an electric current. Between the substrate and the emittive layer, a reflective layer is formed. In addition, an electrode, which has an aperture for transmitting light emission to the outside of this device, is provided on the emittive layer. In such a structure, at least either one of the reflective layer or the emittive layer is selectively formed right under the aperture formed in the electrode and has the same area as that of the aperture. According to this structure, the emitted light generated laterally from this device is so suppressed that the directivity of light emission is greatly improved in this device.

REFERENCES:
patent: 4249967 (1981-02-01), Liu et al.
patent: 5289018 (1994-02-01), Okuda et al.

Affiliated with

Also associated with

Rating

Semiconductor light emitting device having strong directivity of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device having strong directivity of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device having strong directivity of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2312157