Semiconductor light emitting device having roughness layer

Details Semiconductor light emitting device having roughness layer Semiconductor light emitting device having roughness layer

2008-12-19

2010-10-26

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257SE33063

Reexamination Certificate

active

07821024

ABSTRACT:
A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and a roughness layer on the second conductive semiconductor layer. The second conductive semiconductor layer includes a shape of multiple horns, and the roughness layer includes a shape of multiple horns. The second conductive semiconductor layer includes a roughness in which horn shapes and inverse-horn-shaped shapes are alternately formed, and the roughness has a height of about 0.5 μm to about 1.2 μm and a diameter of about 0.3 μm to about 1.0 μm.

REFERENCES:
patent: 6441403 (2002-08-01), Chang et al.
patent: 6469324 (2002-10-01), Wang

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