Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-05-31
2005-05-31
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S079000, C257S012000, C257S014000
Reexamination Certificate
active
06900467
ABSTRACT:
The principal surface of a substrate made of group III-V compound semiconductor is about (100) plane. A light emitting lamination structure is disposed on the principal surface. The light emitting lamination structure includes a quantum well layer made of group III-V mixed crystal semiconductor containing In, a pair of carrier confinement layers made of semiconductor material having a band gap wider than the quantum well layer and sandwiching the quantum well layer, and a pair of clad layers made of semiconductor material having a band gap wider than the carrier confinement layers and sandwiching the quantum well layer and the carrier confinement layers. A difference of 100 meV or larger exists between an energy level of the carrier confinement layers at a conduction band lower end and a ground level of an electron in the quantum well layer.
REFERENCES:
patent: 4819036 (1989-04-01), Kuroda et al.
Jones, K. A., et al., “Accurately determining the composition and thickness of layers in a GaAs/InGaAs superlattice.” Appl. Phys. 76 (3), Aug. 1, 1994, pp. 1609-1616.
Maier, M. , et al., “Composition analysis of molecular beam epitaxy grown InyGa1−yAs/GaAs/AlxGa1−xAs quantum wells by determination of film thickness.” J. Appl. Phys. 73 (8), Apr. 15, 1993, 0021-8979/93/083820-07, American Institute of Physics, pp. 3820-3826.
Pavesi, L. et al., “Photoluminescence of AlxGa1−xAs alloys.” J. Appl. Phys. 75 (10), 0021-8979/94/75(10)4779/64, May 15, 1994.
Ishii Kazuhisa
Kawaguchi Keizo
Maruyama Tsuyoshi
Sasakura Ken
Tomita Shotaro
Frishauf Holtz Goodman & Chick P.C.
Nelms David
Nguyen Thinh T
Stanley Electric Co. Ltd.
LandOfFree
Semiconductor light emitting device having quantum well... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting device having quantum well..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device having quantum well... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3375981