Semiconductor light emitting device having patterned substrate

Details Semiconductor light emitting device having patterned substrate Semiconductor light emitting device having patterned substrate

2011-08-16

2011-08-16

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S013000, C257S021000, C257S103000, C257SE33005, C257SE33006, C257SE33025, C257SE33028, C257SE33030, C257SE33033, C257SE33034, C257SE33043, C257SE33074

Reexamination Certificate

active

07999272

ABSTRACT:
There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

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