Semiconductor light emitting device having nanostructure porous

Details Semiconductor light emitting device having nanostructure porous Semiconductor light emitting device having nanostructure porous

1998-09-09

2000-03-14

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 3, 257 88, H01L 3300

Patent

active

060376120

ABSTRACT:
At least a one conductivity type nanostructure PS layer whose thickness is controlled, and the opposite conductivity type nanostructure PS layer and a one conductivity type mesostructure PS layer arranged in contact with both these sides are comprised. Since the one conductivity type nanostructure PS layer is formed by anodizing the non-degenerate n-type crystalline silicon layer whose thickness is established in advance, the thickness which can provides a maximum luminescence efficiency can be obtained correctly. Then a semiconductor light emitting device whose luminescence efficiency is improved without increasing an unnecessary series resistance is provided. An inexpensive semiconductor light emitting device having a large light emitting area can be provided, since silicon wafer having a large diameter can be employed as the material for light emission

REFERENCES:
patent: 5272355 (1993-12-01), Namavar et al.

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