Semiconductor light emitting device having multiple single...

Details Semiconductor light emitting device having multiple single... Semiconductor light emitting device having multiple single...

2011-08-09

2011-08-09

Pizarro, Marcos D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

C257S094000, C257S190000, C257SE33001, C257SE21023, C438S036000

Reexamination Certificate

active

07994520

ABSTRACT:
Disclosed are a semiconductor light emitting device comprising a single crystalline buffer layer and a manufacturing method thereof. The semiconductor light emitting device comprises a single crystalline buffer layer, and a compound semiconductor structure comprising III and V group elements on the single crystalline buffer layer.

REFERENCES:
patent: 2006/0138448 (2006-06-01), Komiyama et al.
patent: 2007/0120142 (2007-05-01), Son
patent: 2009/0114942 (2009-05-01), Yokoyama et al.

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