Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-05-20
2008-05-20
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S022000, C257S189000
Reexamination Certificate
active
07375367
ABSTRACT:
A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming the lowermost layer of the active region, a second aluminium-containing layer forming the uppermost layer of the active region, and at least one InGaN quantum well layer disposed between the first aluminium-containing layer and the second aluminum-containing layer. The aluminium-containing layers provide improved carrier confinement in the active region, and so increase the output optical power of the device.
REFERENCES:
patent: 5834331 (1998-11-01), Razeghi
patent: 6015979 (2000-01-01), Sugiura et al.
patent: 6147364 (2000-11-01), Itaya et al.
patent: 6388275 (2002-05-01), Kano
patent: 6906352 (2005-06-01), Edmond et al.
patent: 6977952 (2005-12-01), Yamaguchi et al.
patent: 2001/0030316 (2001-10-01), Kuramoto et al.
patent: 2003/0006148 (2003-01-01), Nielsen et al.
patent: 2003/0059971 (2003-03-01), Chua et al.
patent: 2003/0085409 (2003-05-01), Shen et al.
patent: 2003/0189218 (2003-10-01), Watanabe et al.
patent: 2004/0012014 (2004-01-01), Yamanaka et al.
patent: 11-074622 (1999-03-01), None
patent: 2000-196194 (2000-07-01), None
patent: 2000-332290 (2000-11-01), None
patent: 0412874 (2000-11-01), None
Taiwanese Office Action for corresponding Application No. 93132466 dated Dec. 7, 2005.
Korean Office Action for corresponding Application No. 519980961371 dated Apr. 27, 2006.
Chinese Office Action for corresponding Application No. 200410102340.1 dated Dec. 22, 2006.
Chinese Office Action for corresponding Application No. 200410102340.1 dated Jun. 22, 2007.
Bousquet Valerie
Heffernan Jonathan
Hooper Stewart
Johnson Katherine L.
Hafiz Mursalin B.
Louie Wai-Sing
Renner , Otto, Boisselle & Sklar, LLP
Sharp Kabushiki Kaisha
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