Semiconductor light emitting device having AlGaAsP light reflect

Details Semiconductor light emitting device having AlGaAsP light reflect Semiconductor light emitting device having AlGaAsP light reflect

1994-08-18

1995-08-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 98, 372 45, 372 96, 372 98, H01S 319, H01L 3300

Patent

active

054422035

ABSTRACT:
A semiconductor light emitting device has a light emitting layer portion comprising AlGaInP layers formed on a GaAs substrate. A light reflecting layer portion comprising alternately laminated layers with different refractive indices is provided between the GaAs substrate and the light emitting layer portion. The light reflecting layer portion comprises Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v layers (where: 0.ltoreq.w.ltoreq.1, 0<v.ltoreq.0.05 w). An active layer which constitutes the light emitting layer portion comprises an (Al.sub.y Ga.sub.1-y).sub.0.51 In.sub.0.49 P layer (where: 0.ltoreq.y.ltoreq.0.7).

REFERENCES:
patent: 5153889 (1992-10-01), Sugawara et al.

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