Semiconductor light emitting device having a superlattice buffer

Details Semiconductor light emitting device having a superlattice buffer Semiconductor light emitting device having a superlattice buffer

1990-12-05

1992-09-08

Hille, Rolf

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 17, 372 44, 372 45, H01L 2712

Patent

active

051462958

ABSTRACT:
A buffer layer employed for an epitaxial growth includes two kinds of lattices of a superlattice of a lattice matching and a superlattice of a lattice mismatching or of a heterointerface so as to obtain the gas trap effect and the distortion removal effect, thereby improving the quality of the semiconductor device.

REFERENCES:
patent: H095 (1986-07-01), Shanabrook et al.
patent: 4558336 (1985-12-01), Chang et al.
patent: 4712219 (1987-12-01), Yano et al.
patent: 4796067 (1989-01-01), Shimizu et al.
patent: 5005057 (1991-04-01), Izumiya et al.
patent: 5042043 (1991-08-01), Hatano et al.
Das et al., "Variation of refractive index . . . heterostructures", Appl. Phys. lett. 58 (1), Jul. 1, 1985.
"MBE Growth of Extremely High-Quality CaAs-AlGaAs GRIN-SCH Lasers with a Superlattice Buffer Layer"; T. Fujii et al.; j. Vac. Sci. Technology B3(2), Mar./Apr. 1985, pp. 776-778.

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