Semiconductor light emitting device having a structure which rel

Details Semiconductor light emitting device having a structure which rel Semiconductor light emitting device having a structure which rel

1998-03-13

2000-08-22

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 96, 257 97, 257190, 257191, H01L 3300

Patent

active

061076481

ABSTRACT:
A light emitting layer forming portion is formed of an AlGaInP-based compound semiconductor and having an n-type layer and a p-type layer to form a light emitting layer on the substrate. A large bandgap energy semiconductor layer is provided on a surface of the light emitting layer forming portion to constitute a window layer. A buffer layer is interposed between the light emitting layer forming portion and the large bandgap energy semiconductor layer to relieve lattice mismatch of between the light emitting layer forming portion and the large bandgap energy semiconductor layer. The interposition of this buffer layer provides a light emitting device that is high in light emitting efficiency and excellent in electrical characteristics without degrading the film property of the window layer.

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5661742 (1997-08-01), Huang et al.
patent: 5869849 (1999-02-01), Jou et al.

Affiliated with

Also associated with

Rating

Semiconductor light emitting device having a structure which rel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device having a structure which rel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device having a structure which rel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-583996