Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-05-31
2005-05-31
Wille, Douglas (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S099000
Reexamination Certificate
active
06900472
ABSTRACT:
A light emitting device is constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver in contact with the p-type semiconductor layer. A bonding layer is formed overlying the silver layer to make an electrical connection to the silver layer. The silver layer may be thin and transparent or thicker (greater than 20 nm) and reflective.
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Kaneko Yawara
Kondoh You
Nakagawa Shigeru
Watanabe Satoshi
Yamada Norihide
Lumileds Lighting U.S. LLC
Patent Law Group LLP
Wille Douglas
LandOfFree
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